Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• energy. Liang et al. [23] further studied the nonlinear effect of carrier drift on the performance of a ZnO nanogenerator following [21], and put forward a proper electrode configuration for the improvement of the nanogenerator performance. More recently, both time-harmonic and transient behavior have

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

• Yuxing Liang,
• Shuaiqi Fan,
• Xuedong Chen and
• Yuantai Hu

Beilstein J. Nanotechnol. 2018, 9, 1917–1925, doi:10.3762/bjnano.9.183

• University of Science and Technology, Wuhan 430074, China 10.3762/bjnano.9.183 Abstract In piezoelectric semiconductors, electric fields drive carriers into motion/redistribution, and in turn the carrier motion/redistribution has an opposite effect on the electric field itself. Thus, carrier drift in a

• piezoelectric semiconducting structure is essentially nonlinear unless the induced fluctuation of carrier concentration is very small. In this paper, the nonlinear governing equation of carrier concentration was established by coupling both piezoelectric effect and semiconduction. A nonlinear carrier-drift

• power was analyzed in detail. The electrode size for the optimal performance of a ZnO nanowire generator was proposed. This analysis that couples electromechanical fields and carrier concentration as a whole has some referential significance to piezotronics. Keywords: carrier drift; crystallogrpahic c

Fingerprints of a size-dependent crossover in the dimensionality of electronic conduction in Au-seeded Ge nanowires

• Maria Koleśnik-Gray,
• Gillian Collins,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1574–1578, doi:10.3762/bjnano.7.151

• , two regimes were identified for large (lightly doped) and small (stronger doped) nanowires in which the charge-carrier drift is dominated by electron-phonon and ionized-impurity scattering, respectively. This goes in hand with the finding that the electrostatic properties for radii below ca. 37 nm

•  3a). In the case of mobility (Figure 3b), between ≤1015 and ≈1016 cm−3 μNW(Nd) ≈ Nd, indicating that lattice phonon scattering is the main mechanism limiting the carrier drift [25]. The dominance of electron phonon scattering within this density range suggests that the free holes behave similar to

• that a crossover in charge carrier conduction occurs for carrier densities exceeding ≈1016 cm−3, equivalent to the radius decreasing below approximately 37 nm. Analysis of the electrical screening properties shows that this is associated with a shift from a 3D to quasi-1D regime where the carrier drift